Cap | In0.53Ga0.47As | p | 1 × 1019 cm−3 | 30 nm |
Barrier | In0.52Al0.48As | p | 1 × 1019 cm−3 | 200 nm |
Absorber | In0.53Ga0.47As | p | 2.5 × 1018 cm−3 | 150 nm |
In0.53Ga0.47As | p | 1 × 1018 cm−3 | 150 nm | |
In0.53Ga0.47As | p | 4 × 1017 cm−3 | 150 nm | |
Grading | InGaAlAs | undoped | 50 nm | |
Spacer | In0.52Al0.48As | undoped | 100 nm | |
Charge | In0.52Al0.48As | p | 4 × 1017 cm−3 | 90 nm |
Multiplication | In0.52Al0.48As | undoped | 150 nm | |
Buffer | In0.52Al0.48As | n | 5 × 1018 cm−3 | 800 nm |
Substrate | InP | n | SI |